AP62T02GJ Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

Advanced Power
Electronics Corp.
AP62T02GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic _G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP62T02GJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy³
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
BV_DSS
R_DS(ON)
I_D
30V
12mΩ
48A
GD
S
TO-252(H)
GD
S
Rating
30
± 20
48
30
120
36.8
0.3
29
24
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
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