AP60N03GS-HF Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP60N03GS/P-HF
200
T _C =25 ^o C
150
100
10V
8.0V
6.0V
50
V _G =4.0V
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
150
T _C =150 ^o C
100
10V
8.0V
6.0V
50
V _G =4.0V
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
20
I _D = 28 A
T _C =25 ^o C
18
1.6
I _D =28A
V _G =10V
1.4
16
1.2
.
14
1
12
0.8
10
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
100
3
10
2
T _j =150 ^o C
T _j =25 ^o C
1
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3