AP60N03GS-HF Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP60N03GS/P-HF
Electrical Characteristics@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Forward Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS=0V, I_D=250uA
V_GS=10V, I_D=28A
V_GS=4.5V, I_D=22A
V_DS=V_GS, I_D=250uA
V_DS=10V, I_D=28A
V_DS=24V, V_GS=0V
V_GS=+20V, V_DS=0V
I_D=28A
V_DS=24V
V_GS=5V
V_DS=15V
I_D=28A
R_G=3.3Ω
V_GS=10V
V_GS=0V
.^VDS=25V
f=1.0MHz
30 -
-
V
-
- 13.5 mΩ
-
- 20 mΩ
1
-
3
V
- 30 -
S
-
- 10 uA
-
- +100 nA
- 23 - nC
-
3
- nC
- 14 - nC
-
8
- ns
- 81 - ns
- 24 - ns
- 18 - ns
- 950 - pF
- 440 - pF
- 145 - pF
Source-Drain Diode
Symbol
Parameter
I_S
Continuous Source Current ( Body Diode )
I_SM
Pulsed Source Current ( Body Diode )¹
V_SD
Forward On Voltage²
Test Conditions
V_D=V_G=0V , V_S=1.3V
T_j=25℃, I_S=55A, V_GS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in² copper pad of FR4 board
Min. Typ. Max. Units
-
- 55 A
-
- 215 A
-
- 1.3 V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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