AP60N03GJ Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Low On-Resistance Fast Switching

200
T _C =25 ^o C
150
100
10V
8.0V
6.0V
50
V _G =4.0V
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I _D =28A
18
T _C =25 ^o C
16
14
12
10
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T _j =150 ^o C
1
T _j =25 ^o C
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
150
T _C =150 ^o C
100
AP60N03GH/J
10V
8.0V
6.0V
50
V _G =4.0V
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I _D =28A
V _G =10V
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
3
2
1
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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