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AP60N03GJ Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low On-Resistance Fast Switching | |||
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Advanced Power
Electronics Corp.
AP60N03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low On-Resistance
â¼ Fast Switching
â¼ Simple Drive Requirement
â¼ RoHS Compliant
Description
D
G
S
BVDSS
RDS(ON)
ID
30V
13.5mΩ
55A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03GJ) is available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
GDS
TO-252(H)
G
D
S
TO-251(J)
Rating
30
±20
55
35
215
62.5
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
110
Units
â/W
â/W
Data and specifications subject to change without notice
200602051-1/4
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