AP50G60SW-HF_14 Datasheet, PDF (3/3 Pages) Advanced Power Electronics Corp. – High Speed Switching

400
300
200
100
0
0
50
100
150
200
Junction Temperature ( ℃ )
Fig 7. Power Dissipation vs. Junction
Temperature
20
T _C =25 ^o C
15
I _C = 50 A
33 A
15 A
10
5
0
0
4
8
12
16
20
V _GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. V_GE
20
16
T _j =150 ^o C
T _j =25 ^o C
12
8
4
0
0
0.4
0.8
1.2
1.6
2
V _F , Forward Voltage (V)
Fig 11. Forward Characteristic of
Diode
AP50G60SW-HF
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance, Junction-to-Case (IGBT)
20
T _C = 150 ^o C
15
I _C = 50 A
33 A
15 A
10
5
0
0
4
8
12
16
20
V _GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. V_GE
1000
V _GE =15V
T _C =125 ^o C
100
10
-
-
Safe Operating Area
1
1
10
100
1000
V _CE ,Collector - Emitter Voltage(V)
Fig 12. SOA Characteristics
3