AP50G60SW-HF_14 Datasheet, PDF (1/3 Pages) Advanced Power Electronics Corp. – High Speed Switching

Advanced Power
Electronics Corp.
AP50G60SW-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
V_CE(sat),Typ.=2.6V@I_C=33A
▼ Built-in Fast Recovery Diode
▼ RoHS Compliant & Halogen-Free
G
C
E
C
V_CES
I_C
TO-3P
G
Absolute Maximum Ratings
Symbol
V_CES
V_GE
I_C@T_C=25^oC
I_C@T_C=100^oC
I_CM
I_F@T_C=25^oC
I_F@T_C=100^oC
P_D@T_C=25^oC
T_STG
T_J
T_L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Rating
600
+30
75
45
150
40
15
300
-55 to 150
150
300
600V
45A
C
E
Units
V
V
A
A
A
A
A
W
o_C
o_C
o_C
Notes:
1.Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@T_j=25^oC(unless otherwise specified)
Symbol
I_GES
I_CES
V_CE(sat)
V_GE(th)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
C_ies
C_oes
C_res
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V_GE=+30V, V_CE=0V
V_CE=600V, V_GE=0V
V_GE=15V, I_C=33A
V_GE=15V, I_C=50A
V_CE=V_GE, I_C=250uA
I_C=33A
V_CE=400V
V_GE=15V
V_CE=390V,
I_c=33A,
V_GE=15V,
R_G=5Ω,
Inductive Load
V_GE=0V
V_CE=30V
f=1.0MHz
Value
0.42
1.5
40
Units
o_C/W
o_C/W
o_C/W
Min. Typ. Max. Units
-
- +100 nA
-
- 500 uA
- 2.6 3
V
- 3.1 3.5 V
2
-
6
V
-
55 100 nC
-
12
-
nC
-
27
-
nC
-
27
-
ns
-
22
-
ns
- 110 -
ns
- 100 260 ns
- 0.7 - mJ
- 1.2 - mJ
- 1250 2000 pF
- 235 - pF
-
7
- pF
V_F
FRD Forward Voltage
t_rr
FRD Reverse Recovery Time
Q_rr
FRD Reverse Recovery Charge
I_F=15A
I_F=15A
di/dt = 200 A/μs
- 1.3 1.7 V
-
65
-
ns
- 230 - nC
Data and specifications subject to change without notice
1
201303274