AP4955GM Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

70
60
T _A = 25 ^o C
50
-5.0V
-4.5V
40
30
-3.0V
20
-2.5V
10
V _G =- 2.0 V
0
0
1
2
3
4
5
6
7
8
9
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
55
50
I _D = -4 A
T _A =25 ^o C
45
40
35
30
2
3
4
5
6
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T _j =150 ^o C
2
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4955GM
60
T _A = 150 ^o C
50
40
-5.0V
-4.5V
30
-3.0V
20
-2.5V
10
V _G =- 2.0 V
0
0
1
2
3
4
5
6
7
8
9
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D =-5A
1.4
V _G =-10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature