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| AP4955GM Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP4955GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-4A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-5V, ID=-5A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS=±20V
ID=-5A
VDS=-16V
VGS=-4.5V
VDS=-10V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=10Ω
VGS=0V
VDS=-20V
f=1.0MHz
-20 -
-
V
- -0.01 - V/â
-
- 45 mΩ
-
- 65 mΩ
-0.5 - -1.2 V
-
9
-
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 19 30 nC
-
3
- nC
-
6
- nC
-
9
- ns
- 10 - ns
- 52 - ns
- 24 - ns
- 1400 2240 pF
- 270 - pF
- 230 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.6A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- -1.2 V
- 32 - ns
- 22 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 â/W when mounted on min. copper pad.
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