AP4800GYT-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP4800GYT-HF
80
T _A =25 ^o C
10V
7.0V
6.0V
60
5.0V
V _G = 4.0V
40
20
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
T _A = 150 ^o C
10V
7.0V
50
6.0V
5.0V
40
V _G = 4.0V
30
20
10
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
28
I_D=8A
T _A =25 ℃
24
2.0
I _D =10A
V _G =10V
1.6
20
.
1.2
16
0.8
12
8
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
16
1.2
12
1.0
T _j =150 ^o C
T _j =25 ^o C
8
0.8
4
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3