AP4800GYT-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP4800GYT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP4800 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK^® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
BV_DSS
R_DS(ON)
I_D
30V
13mΩ
13A
D
D
D
D
S
S
S
G
PMPAK^® 3x3
Absolute
Symbol
Maximum
Rating_Ps_a@_ramT_ejt=_er25^o_.C(unless
otherwise specified)
Rating
Units
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+25
V
13
A
10.4
A
40
A
3.57
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
4.5
35
Unit
℃/W
℃/W
1
201501296