 English |
|
|
|
|
|
|
|
| AP4527GN3 Datasheet, PDF (3/7 Pages) Advanced Power Electronics Corp. – Bottom Exposed DFN, Low On-resistance | |||
| |||
| ◁ |
AP4527GN3
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
ÎBVDSS/ÎTj
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20 -
-
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
- -0.1 -
RDS(ON)
Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.5A
-
- 65
VGS=-2.5V, ID=-1.5A
-
- 100
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.3 - -1.2
gfs
Forward Transconductance
VDS=-5V, ID=-2.5A
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-20V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
VDS=-16V ,VGS=0V
IGSS
Gate-Source Leakage
VGS=±12V
Qg
Total Gate Charge2
ID=-2.5A
- 2.5 -
-
- -1
-
- -10
-
- ±100
- 10.7 17
Qgs
Gate-Source Charge
VDS=-16V
- 1.8 -
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-10V
- 4.7 -
-
9
-
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
ID=-1A
RG=3.3Ω,VGS=-10V
RD=10Ω
-
8
-
- 32 -
- 10 -
Ciss
Input Capacitance
VGS=0V
- 740 1180
Coss
Output Capacitance
VDS=-15V
- 170 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 130 -
Unit
V
V/â
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-2.5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Unit
-
- -1.2 V
- 28 - ns
- 19 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted FR4 board, tâ¦5s.
3/7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese