AP4527GN3 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Bottom Exposed DFN, Low On-resistance

Advanced Power
Electronics Corp.
AP4527GN3
Preliminary
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Bottom Exposed DFN
▼ Low On-resistance
▼ Lower Profile
▼ RoHS Compliant
D2
D2
D1
D1
S2
G2
DFN3*3 _G1S1
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
20V
35mΩ
4.7A
-20V
65mΩ
-3.3A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
20
-20
±12
±12
4.7
-3.3
3.8
-2.7
20
-20
1.25
0.01
-55 to 150
-55 to 150
Max.
Value
100
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200801062pre-1/7