AP2613GY-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic, Lower Gate Charge

25
T _A =25 ^o C
-5.0V
-4.5V
20
-3.5V
-2.5V
15
V _G = -1.8V
10
5
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
95
85
TI ^DA==TI-21DA5A==^o-2C45.2o^AC
75
65
55
45
35
25
1
2
3
4
5
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T _j =150 ^o C
T _j =25 ^o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2613GY-HF
25
T_A=150^oC
-5.0V
-4.5V
20
-3.5V
-2.5V
65mΩ
15
V _G = -1.8V
10
5
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D = -4A
1.6 ^V GS ^{= -4.5V}
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I _D = -250uA
1.6
1.2
0.8
0.4
2.01E+08
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3