AP2613GY-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic, Lower Gate Charge

Advanced Power
Electronics Corp.
AP2613GY-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
D
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
BV_DSS
R_DS(ON)
I_D
-20V
37mΩ
- 6.2A
S
D
D
SOT-26
G
D
D
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 20
+8
-6.2
-4.9
-24
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201111081