AP2314GN-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V gate drive, Lower on-resistance

15
T _A =25 ^o C
10
5.0V
4.5V
3.0V
2.5V
5
V _G = 1. 5V
0
0
1
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I _D =1.2A
T _A =25 ^o C
80
60
40
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
3
2
T _j =150 ^o C
1
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2314GN-HF
15
T _A = 150 ^o C
10
5.0V
4.5V
3.0 V
2.5V
5
V _G = 1 .5V
0
0
1
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D = 3.5 A
V _G =4.5V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3