|
AP2314GN-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V gate drive, Lower on-resistance | |||
|
Advanced Power
Electronics Corp.
AP2314GN-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Capable of 2.5V gate drive
â¼ Lower on-resistance
D
â¼ Surface mount package
â¼ RoHS Compliant & Halogen-Free
S
Description
SOT-23 G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
BVDSS
RDS(ON)
ID
The SOT-23 package is widely used for commercial-industrial applications.
G
20V
75mâ¦
3.5A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
3.5
2.8
10
0.83
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
â
â
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
150
Unit
â/W
1
201006214
|
▷ |