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IRF840S Datasheet, PDF (2/4 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
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IRF840S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance VGS=10V, ID=4.8A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=4.8A
Drain-Source Leakage Current
VDS=500V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=400V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=+20V, VDS=0V
ID=8A
Gate-Source Charge
VDS=400V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=250V
Rise Time
ID=8A
Turn-off Delay Time
RG=9.1Ω,VGS=10V
Fall Time
RD=31Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
500 -
-
V
-
- 0.85 Ω
2
-
4
V
- 4.2 -
S
-
- 25 uA
-
- 250 uA
-
- +100 nA
- 45 72 nC
-
7
- nC
- 25 - nC
- 12 - ns
- 31 - ns
- 48 - ns
- 33 - ns
- 1250 2000 pF
- 270 - pF
- 85 - pF
- 1.6 2.4 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Qrr
Reverse Recovery Charge
Test Conditions
Tj=25℃, IS=8A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.5 V
- 515 - ns
- 8.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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