IRF840S Datasheet, PDF (1/4 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Advanced Power
Electronics Corp.
▼ Ease of Paralleling
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
IRF840S
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
R_DS(ON)
500V
0.85Ω
G
I_D
8A
S
Description
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
G _{D S TO-263(S)}
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+20
8
5.1
32
125
320
8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1.0
40
Unit
℃/W
℃/W
1
200904141