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| AP9916GJ Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – Low on-resistance, Capable of 2.5V gate drive | |||
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AP9916GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=18V, VGS=0V
VDS=18V ,VGS=0V
VGS= ± 8V
ID=18A
VDS=18V
VGS=5V
VDS=10V
ID=18A
RG=3.3Ω,VGS=5V
RD=0.56Ω
VGS=0V
VDS=18V
f=1.0MHz
18 -
-
V
- 0.03 - V/â
-
- 25 mΩ
-
- 40 mΩ
0.5 -
1V
-
18 -
S
-
- 25 uA
-
- 250 uA
-
- ±100 nA
- 17.5 - nC
- 1.2 - nC
- 7.9 - nC
- 7.3 - ns
- 98 - ns
- 25.6 - ns
- 98 - ns
- 527 - pF
- 258 - pF
- 112 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25â, IS=35A, VGS=0V
Min. Typ. Max. Units
-
- 35 A
-
- 90 A
-
- 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
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