AP9916GJ Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Low on-resistance, Capable of 2.5V gate drive

Advanced Power
Electronics Corp.
AP9916GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
D
▼ Capable of 2.5V gate drive
▼ Low drive current
▼ Surface mount package
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
18V
25mΩ
35A
GD _S
TO-252
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=125℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251
Rating
18
±8
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.5
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200723011