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| AP6982GM-HF_14 Datasheet, PDF (2/7 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic | |||
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AP6982GM-HF
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=8A
VGS=4.5V, ID=6A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=8A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+25V, VDS=0V
ID=8A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=15Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
30 -
-
V
- 0.03 - V/â
- 15 18 mΩ
- 23 30 mΩ
1
-
3
V
- 12 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 14 22 nC
-
4
- nC
-
8
- nC
- 12 - ns
-
7
- ns
- 25 - ns
-
9
- ns
- 1050 1680 pF
- 240 - pF
- 165 - pF
- 1.6 2.4 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=8A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 23 - ns
- 15 - nC
2
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