AP6982GM-HF_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP6982GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ Surface Mount Package
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
CH-1
G2
S2 _CH-2
G1
S1
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
S1
30V
18mΩ
8.5A
30V
26mΩ
7.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
CH-1
CH2
30
30
+25
+25
8.5
7.3
6.8
5.8
30
30
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
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