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AP50PN750I Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
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AP50PN750I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=4.5A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=4.5A
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Source-Drain Diode
ID=4.5A
VDS=400V
VGS=10V
VDD=250V
ID=4.5A
RG=50Ω
VGS=10V
VGS=0V
VDS=100V
. f=1.0MHz
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=4.5A, VGS=0V
IS=4.5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
500 -
-
V
-
- 0.75 Ω
2
-
5V
- 12.5 -
S
-
- 100 uA
-
- +100 nA
- 34 54.4 nC
-
9
- nC
- 13.5 - nC
- 42 - ns
- 45 - ns
- 150 - ns
- 40 - ns
- 1370 2192 pF
- 53 - pF
-
8
- pF
- 1.5 3 Ω
Min. Typ. Max. Units
-
- 1.5 V
- 300 - ns
- 1.8 - uC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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