AP50PN750I Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP50PN750I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP50PN750 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
BV_DSS
R_DS(ON)
I_D3
500V
0.75Ω
8.6A
G
DS
TO-220CFM(I)
.
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy⁴
Storage Temperature Range
Operating Junction Temperature Range
500
V
+20
V
8.6
A
5.4
A
34
A
31.3
W
1.92
W
18
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4
65
Units
℃/W
℃/W
1
201510261