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| AP09N70I-H-HF Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP09N70I-H-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance3 VGS=10V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=50V, ID=4.5A
Drain-Source Leakage Current
VDS=600V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=+30V, VDS=0V
ID=9A
Gate-Source Charge
VDS=480V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=300V
Rise Time
ID=9A
Turn-off Delay Time
RG=10Ω,VGS=10V
Fall Time
RD=34Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
700 -
-
V
- 0.6 - V/â
-
- 0.85 Ω
2
-
4
V
- 4.5 -
S
-
- 10 uA
-
- 500 uA
-
- +100 nA
- 44 - nC
- 11 - nC
- 12 - nC
- 19 - ns
- 21 - ns
- 56 - ns
- 24 - ns
- 2660 - pF
- 170 - pF
- 10 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25â, IS=9A, VGS=0V
Min. Typ. Max. Units
-
- 8.3 A
-
- 40 A
-
- 1.5 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=8A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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