AP09N70I-H-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
AP09N70I-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
700V
R_DS(ON)
0.85Ω
I_D
8.3A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
I_AR
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
700
+30
8.3
5.2
40
42
0.34
1.92
32
8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
W
mJ
A
℃
℃
Value
3
65
Units
℃/W
℃/W
1
201006082