2SA966 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

RoHS
2SA966
2SA966 TRANSISTOR (PNP)
D FEATURE
Power dissipation
T _{PCM : 0.9 W(Tamb=25℃)}
.,L ^{Collector current}
I_CM : -1.5 A
Collector-base voltage
O _{V(BR)CBO : -30 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
O _{Collector-base breakdown voltage}
V(BR)CBO
Ic= -1mA , IE=0
-30
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10 mA , IB=0
-30
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= -1mA, IC=0
-5
T _{Collector cut-off current}
ICBO
VCB= -30 V , IE=0
C _{Emitter cut-off current}
IEBO
VEB= -5V , IC=0
E _{DC current gain}
hFE(1)
VCE=-2 V, IC= -500mA
100
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= -1.5 A, IB= -0.03A
E _{Base-emitter voltage}
VBE
IC= -500 mA, VCE= -2V
J _{Transition frequency}
fT
VCE= -2 V, IC= -500mA
100
MAX
-0.1
-0.1
320
-2
-1
E_{CLASSIFICATION OF hFE(1)}
W^Rank
O
Y
UNIT
V
V
V
µA
µA
V
V
MHz
Range
100-200
160-320
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