M10HXXCT_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common Cathode High Voltage Schottky Rectifier

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M10HxxCT, MF10HxxCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage per diode
Maximum reverse current per diode
V_F ⁽¹⁾
I_R ⁽¹⁾
I_F = 5 A
I_F = 5 A
I_F = 10 A
I_F = 10 A
Rated V_R
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 100 °C
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
VALUE
0.76
0.61
0.85
0.71
3.5
4.5
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M
Typical thermal resistance per diode
R_JC
2.2
MF
UNIT
5.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
M10H100CTHE3_A/P ⁽¹⁾
ITO-220AB
MF10H100CTHE3_A/P ⁽¹⁾
Note
(1) _{AEC-Q101 qualifiedï€} 
UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
1.85
P
50/tube
Tube
1.79
P
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (T_C = 25 °C unless otherwise noted)
12
M
10
8
6
MF
4
2
0
0
25 50
75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve Per Diode
175
T_J = T_J Max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 22-Jan-15
2
Document Number: 87728
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