2SK2751 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

UTC 2SK2751
N-CHANNEL JUNCTION FET
FEATURES
*Low noise-figure (NF).
*High gate to drain voltage V_GDO.
APPLICATIONS
*For impedance conversion in low frequency.
*For pyroelectric sensor.
MARKING SYMBOL
HS
N-CHANNEL JFET
2
1
3
SOT-23
1: DRAIN 2: SOURCE 3: GATE
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
V_GDS
I_D
I_G
P_D
T_ch
T_stg
RATINGS
-40
10
2
200
150
-55 ~ +150
UNIT
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25±3℃, unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS MIN
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance
(Common Source)
I_DSS
VDS=10V, VGS=0
1.4
I_GSS
VGS=-20V, VDS=0
V_GDS
IG=-100μA, VDS=0
-40
V_GSC
VDS=10V, ID=1μA
| Y_fs | VDS=10V, VGS=0, f=1kHz
2.5
C_iss
C_oss
VDS=10V, VGS=0, f=1MHz
C_rss
TYP
5
1
1
MAX
4.7
-1
-3.5
UNIT
mA
nA
V
V
mS
pF
pF
pF
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R206-067,B