2SK2735S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon N-Channel MOSFET

SMD Type
IC
Product specification
2SK2735S
Features
Low on-resistance
RDS = 20 m typ.
High speed switching
4V gate drive device can be driven from 5V source
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
30
V
VGSS
20
V
ID
20
A
Idp *
80
A
PD
20
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
VDSS ID=10mA,VGS=0V
IDSS VDS=30V,VGS=0
IGSS VGS= 16V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=10A
VGS=10V,ID=10A
RDS(on)
VGS=4V,ID=10A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
ton
tr
ID=10A,VGS(on)=10V,RL=1
toff
tf
Min Typ Max Unit
30
V
10
A
10
A
1.0
2.0 V
8 16
S
20 28 m
35 50 m
750
pF
520
pF
210
pF
16
ns
225
ns
85
ns
90
ns
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