2SK2414 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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Product specification
2SK2414
Features
Low On-Resistance
RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A)
Low Ciss Ciss = 840 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
10
A
Idp *
±40
A
PD
20
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
Min Typ Max Unit
IDSS VDS=60V,VGS=0
10
A
IGSS VGS= 20V,VDS=0
10
A
VGS(off) VDS=10V,ID=1mA
1.0 1.6 2.0 V
Yfs VDS=10V,ID=5A
7.0 12
S
VGS=10V,ID=5A
RDS(on)
VGS=4V,ID=5A
52 70 m
68 95 m
Ciss
860
pF
Coss VDS=10V,VGS=0,f=1MHZ
440
pF
Crss
110
pF
ton
15
ns
tr
90
ns
ID=5A,VGS(on)=10V,RG=10 ,VDD=30V
toff
75
ns
tf
35
ns
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