2SK2211 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

SSMMDD TTyyppee
Features
Low ON-resistance RDS(ON)
High-speed switching
IC
Product specification
2SK2211
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10ms,Duty Cycle 50%
Symbol
Rating
Unit
VDSS
30
V
VGSS
20
V
ID
1.0
A
Idp *
2.0
A
PD
1
W
Tch
150
Tstg
-55 to +150
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Marking
Marking
2M
Symbol
Testconditons
Min
VDSS ID=0.1mA,VGS=0
30
VGSS IGS=0.1mA,VGS=0
20
IDSS VDS=25V,VGS=0
IGSS VGS= 15V,VDS=0
Vth VDS=5V,ID=1mA
0.8
Yfs VDS=10V,ID=0.5A
0.5
VGS=4V,ID=0.5A
RDS(on)
VGS=10V,ID=0.5A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
ton
tr ID=0.5A,VGS(on)=10V,RL=10 ,VDD=10V
toff
Typ
0.48
0.35
87
69
23
12
160
60
Max
1.0
10
2
0.75
0.6
Unit
V
V
A
A
V
S
pF
pF
pF
ns
ns
ns
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