2SK2159 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SSMMDD TTyyppee
Features
Capable of drive gate with 1.5 V
Small RDS(on)
RDS(on) = 0.7 MAX. @VGS = 1.5 V, ID = 0.1 A
RDS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A
IC
Product specification
2SK2159
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
60
V
VGSS
14
V
ID
2.0
A
Idp *
4.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
Symbol
Testconditons
IDSS VDS=60V,VGS=0
IGSS VGS= 14V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=1.0A
VGS=1.5V,ID=0.1A
RDS(on) VGS=2.5V,ID=1.0A
VGS=4.0V,ID=1.0A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=1.0A,VGS(on)=3V,RL=25 ,RG=10
,VDD=25V
tf
Marking
Marking
NW
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Min Typ Max Unit
1.0
A
10
A
0.5 0.9 1.1 V
0.4
S
0.55 0.7
0.27 0.5
0.22 0.3
319
pF
109
pF
22
pF
38
ns
128
ns
237
ns
130
ns
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