2SK2033 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

SMD Type
MOSFET
Product specification
2SK2033
Features
High input impedance.
Low gate threshold voltage :Vth=0.5 to 1.5V
Enhancement-Mode
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
PD
Tch
Tstg
Rating
20
10
100
200
150
-55 to +150
Unit
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Symbol
Testconditons
IDSS VDS=10V,VGS=0
IGSS VGS=20V,VDS=0
Vth VDS=3V,ID=0.1mA
Yfs VDS=3V,ID=10mA
RDS(on) VGS=2.5V,ID=10mA
Ciss
Coss VDS=3V,VGS=0,f=1MHZ
Crss
td(on)
td(off)
ID=10mA,VGS(on)=2.5V,VDD=3V
Min Typ Max Unit
1
A
1
A
0.5
1.5 V
25 50
ms
8 12
8.5
pF
3.3
pF
9.3
pF
0.16
s
0.15
s
Marking
Marking
KP
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