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2SK2615_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2615
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2615
DC−DC Converter, Relay Drive and Motor Drive
Applications
z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
Tch
Tstg
60
V
60
V
±20
V
2
A
6
0.5
W
1.5
W
150
°C
−55~150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Thermal resistance, channel to
ambient
Rth (ch−a)
250
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit
°C / W
Marking
Part No. (or abbreviation code)
ZA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-17