2SK2613 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

2SK2613
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)
2SK2613
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.)
· High forward transfer admittance: ïYfsï = 6.0 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 800 V)
· Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
1000
V
1000
V
±30
V
8
A
24
150
W
910
mJ
8
A
15
mJ
150
°C
-55~150
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURSE
JEDEC
―
JEITA
―
TOSHIBA
2−16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
0.833
50
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 26.3 mH, R_G = 25 W, I_AR = 8 A
Note 3: Repetitive rating: Pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-09