2SK2606 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

2SK2606
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2606
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.)
l High forward transfer admittance : |Yfs|= 7.0 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 640 V)
l Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
800
V
800
V
±30
V
8
A
24
A
85
W
883
mJ
8
A
8.5
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
1.47
°C / W
41.6
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 25.0 mH, I_AR = 8 A, R_G = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-06-27