2SK246_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Constant Current, Impedance

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance
Converter and DC-AC High Input
Impedance Amplifier Circuit Applications
2SK246
Unit: mm
• High breakdown voltage: V_GDS = −50 V
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
I_G
P_D
T_j
T_stg
−50
V
10
mA
300
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
SC-43
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1C
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
I_GSS
V _{(BR) GDS}
V_GS = −30 V, V_DS = 0
V_DS = 0, I_G = −100 μA
I_DSS
V_DS = 10 V, V_GS = 0
(Note)
V_{GS (OFF)}
⎪Y_fs⎪
C_iss
C_rss
V_DS = 10 V, I_D = 0.1 μA
V_DS = 10 V, V_GS = 0, f = 1 kHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DG = 10 V, I_D = 0, f = 1 MHz
Note: I_DSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
1.2
⎯
14
mA
−0.7
⎯
−6.0
V
1.5
⎯
⎯
mS
⎯
9.0
⎯
pF
⎯
2.5
⎯
pF
1
2007-11-01