2SK2467_06 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High-Power Amplifier Application

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
• High breakdown voltage: V_DSS = 180 V
• High forward transfer admittance: |Y_fs| = 4.0 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D
T_ch
T_stg
180
V
±20
V
9
A
80
W
150
°C
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Characteristics
Symbol
Test Condition
Drain cut-off current
Gate leakage current
Drain-source breakdown voltage
Drain-source saturation voltage
Gate-source cut-off voltage (Note 3)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse capacitance
I_DSS
I_GSS
V _{(BR) DSS}
V_{DS (ON)}
V_{GS (OFF)}
|Y_fs|
C_iss
C_oss
C_rss
V_DS = 180 V, V_GS = 0
V_DS = 0, V_GS = ±20 V
I_D = 10 mA, V_GS = 0
V_GS = 10 V, I_D = 6 A
V_DS = 10 V, I_D = 0.1 A
V_DS = 10 V, I_D = 3 A
V_DS = 30 V, V_GS = 0, f = 1 MHz
V_DS = 30 V, V_GS = 0, f = 1 MHz
V_DS = 30 V, V_GS = 0, f = 1 MHz
Note 3: V_{GS (OFF)} classification Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device. Plese handle with caution.
Min Typ. Max Unit
―
―
1.0 mA
―
― ±0.5 μA
180 ―
―
V
―
2.5
5.0
V
1.4
―
2.8
V
―
4.0
―
S
― 700 ―
pF
― 150 ―
pF
―
90
―
pF
1
2006-11-21