2SK2312_02 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ㅠ-MOSV)

2SK2312
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²âˆ’π−MOSV)
2SK2312
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 40 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
l Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
60
V
60
V
±20
V
45
A
180
A
45
W
701
mJ
45
A
4.5
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
2.78
°C / W
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 471 µH, R_G = 25 Ω, I_AR = 45 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-02-06