2SK2229 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

2SK2229
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²âˆ’π−MOSV)
2SK2229
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
4-V gate drive
Low drain−source ON resistance : RDS (ON) = 0.12 Ω (typ.)
High forward transfer admittance : |Yfs| = 5.0 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
60
V
60
V
±20
V
5
A
20
A
1.3
W
129
mJ
5
A
0.13
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
R_{th (ch−a)}
96.1
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 7 mH, R_G = 25 Ω, I_AR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2004-07-06