2SK2145-Y Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Audio Frequency Low Noise Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK2145
2SK2145
Audio Frequency Low Noise Amplifier Applications
• Including two devices in SM5 (super mini type with 5 leads.)
• High |Y_fs|: |Y_fs| = 15 mS (typ.) at V_DS = 10 V, V_GS = 0
• High breakdown voltage: V_GDS = −50 V
• Low noise: NF = 1.0dB (typ.)
at V_DS = 10 V, I_D = 0.5 mA, f = 1 kHz, R_g = 1 kΩ
• High input impedance: I_GSS = −1 nA (max) at V_GS = −30 V
Marking
Pin Assignment (top view)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
V_GDS
−50
V
I_G
10
mA
P_D
300
mW
(Note 1)
T_j
125
°C
T_stg
−55~125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3L1C
Weight: 0.016 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01