2SK211_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type FM Tuner Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
2SK211
FM Tuner Applications
VHF Band Amplifier Applications
Unit: mm
• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
• High forward transfer admitance: |Y_fs| = 9 mS (typ.)
• Extremely low reverse transfer capacitance: C_rss = 0.1 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_GDO
I_G
P_D
T_j
T_stg
−18
V
10
mA
150
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Marking
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
I_GSS
V_GS = −0.5 V, V_DS = 0 V
V _{(BR) GDO} I_G = −100 μA
I_DSS
(Note)
V_GS = 0 V, V_DS = 10 V
V_{GS (OFF)}
⎪Y_fs⎪
C_iss
C_rss
V_DS = 10 V, I_D = 1 μA
V_GS = 0 V, V_DS = 10 V, f = 1 kHz
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_GD = −10 V, f = 1 MHz
G_PS
V_DD = 10 V, f = 100 MHz (Figure)
NF
V_DD = 10 V, f = 100 MHz (Figure)
Note: I_DSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
1
Min Typ. Max Unit
⎯
⎯
−10
nA
−18 ⎯
⎯
V
1.0
⎯
10
mA
−0.4
⎯
−4.0
V
⎯
9
⎯
mS
⎯
6.0
⎯
pF
⎯
⎯ 0.15 pF
⎯
18
⎯
dB
⎯
2.5
3.5
dB
2007-11-01