2SK210-GR Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – FM Tuner Applications VHF Band Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications
VHF Band Amplifier Applications
2SK210
Unit: mm
• High power gain: G_PS = 24dB (typ.) (f = 100 MHz)
• Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
• High forward transfer admittance: |Y_fs| = 7 mS (typ.) (f = 1 kHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDO
I_G
P_D
T_j
T_stg
−18
V
10
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1C
absolute maximum ratings.
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
I_GSS
V_GS = −1.0 V, V_DS = 0 V
V _{(BR) GDO} I_G = −100 μA
I_DSS
V_GS = 0 V, V_DS = 10 V
(Note)
V_{GS (OFF)}
⎪Y_fs⎪
V_DS = 10 V, I_D = 1 μA
V_GS = 0 V, V_DS = 10 V, f = 1 kHz
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
C_rss
V_GD = −10 V, f = 1 MHz
G_PS
V_DD = 10 V, f = 100 MHz (Figure 1)
NF
V_DD = 10 V, f = 100 MHz (Figure 1)
⎯
⎯
−10
nA
−18 ⎯
⎯
V
3
⎯
24
mA
−1.2 −3
⎯
V
⎯
7
⎯
mS
⎯
3.5
⎯
pF
⎯
⎯ 0.65 pF
⎯
24
⎯
dB
⎯
1.8
3.5
dB
Note: I_DSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
1
2007-11-01