2SK2013_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Power Amplifier Application

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
2SK2013
Audio Frequency Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SJ313
: V_DSS = 180V
: |Y_fs| = 0.7 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 2)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D
T_ch
T_stg
180
V
±20
V
1
A
25
W
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
SC−67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
K2013
Part No.
(or abbreviation code)
Lot No.
Note 1
Note 1: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of the
Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain−source breakdown voltage
Gate−source cut−off voltage (Note 3)
Drain−source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
I_GSS
V _{(BR) DSS}
V_{GS (OFF)}
V_{DS (ON)}
|Y_fs|
C_iss
C_oss
C_rss
V_DS = 0, V_GS = ±20 V
I_D = 10 mA, V_GS = 0
V_DS = 10 V, I_D = 10 mA
I_D = 0.6 A, V_GS = 10 V
V_DS = 10 V, I_D = 0.3 A
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DD ≈ 10 V, V_GS = 0, f = 1 MHz
Note 2: Ensure that the channel temperature does not exceed 150°C.
Note 3: V_{GS (OFF)} Classification
O: 0.8~1.6,
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Y: 1.4~2.8
1
Min Typ. Max Unit
—
— ±100 nA
180
—
—
V
1.8
—
2.8
V
—
1.7 3.0
V
—
0.7
—
S
— 170 —
—
45
—
pF
—
17
—
2009-09-29