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2SK2013_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION | |||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
2SK2013
Audio Frequency Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SJ313
: VDSS = 180V
: |Yfs| = 0.7 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Gateâsource voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
180
V
±20
V
1
A
25
W
150
°C
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Marking
JEDEC
â
JEITA
SCâ67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
K2013
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drainâsource breakdown voltage
Gateâsource cutâoff voltage (Note 2)
Drainâsource saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IGSS
V (BR) DSS
VGS (OFF)
VDS (ON)
|Yfs|
Ciss
Coss
Crss
VDS = 0, VGS = ±20 V
ID = 10 mA, VGS = 0
VDS = 10 V, ID = 10 mA
ID = 0.6 A, VGS = 10 V
VDS = 10 V, ID = 0.3 A
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDD â 10 V, VGS = 0, f = 1 MHz
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
O: 0.8~1.6,
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Y: 1.4~2.8
1
Min Typ. Max Unit
â
â ±100 nA
180
â
â
V
1.8
â
2.8
V
â
1.7 3.0
V
â
0.7
â
S
â 170 â
â
45
â
pF
â
17
â
2006-11-21
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