2SK2009 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2009
High Speed Switching Applications
Analog Switch Applications
· High input impedance.
· Low gate threshold voltage: Vth = 0.5~1.5 V
· Excellent switching times: ton = 0.06 µs (typ.)
toff = 0.12 µs (typ.)
· Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
· Small package.
· Enhancement-mode
Marking
Equivalent Circuit
2SK2009
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
Rating
Unit
30
V
±20
V
200
mA
200
mW
150
°C
-55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: This transistor is electrostatic sensitive device. Please handle with caution.
1
2003-03-27