2SK1930_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII^.5)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : R_{DS (ON)} = 3.0 Ω (typ.)
z High forward transfer admittance : |Y_fs| = 2.0 S (typ.)
z Low leakage current : I_DSS = 300 μA (max) (V_DS = 800 V)
z Enhancement mode : V_th = 1.5~3.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
1000
V
1000
V
±20
V
4
A
12
100
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch–c)}
R_{th (ch–a)}
1.25
°C / W
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
2006-11-09