LPV7215_14 Datasheet, PDF (1/28 Pages) Texas Instruments – LPV7215Q Micropower, CMOS Input, RRIO, 1.8V, Push-Pull Output Comparator

LPV7215
www.ti.com
SNOSAI6I – SEPTEMBER 2005 – REVISED APRIL 2013
LPV7215Q Micropower, CMOS Input, RRIO, 1.8V, Push-Pull Output Comparator
Check for Samples: LPV7215
FEATURES
1
•2 (For V⁺ = 1.8V, Typical Unless Otherwise
Noted)
• Ultra Low Power Consumption 580 nA
• Wide Supply Voltage Range 1.8V to 5.5V
• Propagation Delay 4.5 µs
• Push-Pull Output Current Drive @ 5V 19 mA
• Temperature Range −40°C to 125°C
• Rail-to-Rail Input
• Tiny 5-Pin SOT23 and SC70 Packages
APPLICATIONS
• RC Timers
• Window Detectors
• IR Receiver
• Multivibrators
• Alarm and Monitoring Circuits
DESCRIPTION
The LPV7215Q is an ultra low-power comparator with
a typical power supply current of 580 nA. It has the
best-in-class power supply current versus
propagation delay performance available among TI's
low-power comparators. The propagation delay is as
low as 4.5 microseconds with 100 mV overdrive at
1.8V supply.
Designed to operate over a wide range of supply
voltages, from 1.8V to 5.5V, with ensured operation
at 1.8V, 2.7V and 5.0V, the LPV7215Q is ideal for
use in a variety of battery-powered applications. With
rail-to-rail common mode voltage range, the
LPV7215Q is well suited for single-supply operation.
Featuring a push-pull output stage, the LPV7215Q
allows for operation with absolute minimum power
consumption when driving any capacitive or resistive
load.
Available in a choice of space-saving packages, the
LPV7215Q is ideal for use in handheld electronics
and mobile phone applications. The LPV7215Q is
manufactured with TI's advanced VIP50 process.
TYPICAL APPLICATION
900
V_CM = 0.8V
800
700
85°C
600
25°C
500
-40°C
400
300
200
100
0
0
1
2
3
4
56
SUPPLY VOLTAGE (V)
Figure 1. Supply Current vs. Supply Voltage
18
V⁺ = 1.8V
T_A = 25°C
13
t_{PD L-H}
8
t_{PD H-L}
3
1
10
100
1000
OVERDRIVE (mV)
Figure 2. Propagation Delay vs. Overdrive
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated